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Список видань за алфавітом назв: Авторський покажчик Покажчик назв публікацій  |
Пошуковий запит: (<.>A=Milenin G$<.>) | |||
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Загальна кількість знайдених документів : 8 Представлено документи з 1 до 8 |
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| 1. | 
Milenin G. V. Analysis of random events in physical and chemical processes flowing in materials of semiconductor products under external influences and thermal aging [Електронний ресурс] / G. V. Milenin // Semiconductor physics quantum electronics & optoelectronics. - 2015. - Vol. 18, № 3. - С. 233-247. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_3_3 It has been proposed to consider physical and chemical processes in materials ofsemiconductor products under external influences and thermal aging as flows of the random events. The mathematical analysis of random events in the physical and chemical processes has been presented. The theoretical results have been applied to the analysis of a number of processes. | ||
| 2. |
Milenin G. V. Probabilistic approach to the analysis of regularities in behavior of parameters inherent to materials of electronic equipment under action of external fields [Електронний ресурс] / G. V. Milenin // Semiconductor physics, quantum electronics & optoelectronics. - 2015. - Vol. 18, № 4. - С. 456-459. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2015_18_4_17 It has been shown that the dependence between the parameters of materials of electronic equipment and external fields is determined by the distribution function of the corresponding random variable. The obtained results have been applied to the analysis of a number of physical phenomena. | ||
| 3. |
Milenin G. V. Physical mechanisms and models of long-term transformations of radiative recombination in n-GaAs due to the magnetic field treatments [Електронний ресурс] / G. V. Milenin, R. A. Red’ko // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 3. - С. 279-284. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_3_8 Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable - time to a random event - obeys the Weibull - Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented.Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented. | ||
| 4. |
Milenin G. V. Physical mechanisms and models of the long-term transformations in radiative recombination observed in n-GaAs under microwave irradiation [Електронний ресурс] / G. V. Milenin, R. A. Red'ko // Semiconductor physics, quantum electronics & optoelectronics. - 2016. - Vol. 19, № 1. - С. 14-22. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2016_19_1_5 Simulation of long-term changes in photoluminescence of n-GaAs after microwave treatment by using the analysis of random events underlying the processes of evolution of the defect structure has been performed. We have shown the agreement of the experimental and theoretical time dependences of the changes in the photoluminescence intensity provided that the distribution of the random variable - time to a random event - obeys the Weibull - Gnedenko law. The mechanisms of transformation of the defect structure, which are based on the dynamics of behavior of dislocations and impurity complexes owing to microwave irradiation, have been presented.Simulation of long-time changes in photoluminescence of n-GaAs has been performed, and the mechanism of transformation of the defect structure caused by magnetic field treatments has been represented. | ||
| 5. |
Milenin G. V. High-frequency electromagnetic radiation of germanium crystals in magnetic fields [Електронний ресурс] / G. V. Milenin, V. V. Milenin, R. A. Redko // Semiconductor physics, quantum electronics & optoelectronics. - 2017. - Vol. 20, № 2. - С. 231-234. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2017_20_2_16 The cyclotron radiation of plasma of thermal carriers of germanium crystals, which is not in the state of thermodynamic equilibrium with semiconductor, has been experimentally confirmed. | ||
| 6. |
Milenin G. V. Cyclotron radiation of semiconductor crystals [Електронний ресурс] / G. V. Milenin, V. V. Milenin, R. A. Red'ko // Semiconductor physics, quantum electronics & optoelectronics. - 2018. - Vol. 21, № 1. - С. 54-57. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2018_21_1_7 We obtained relations for estimating the power of cyclotron radiation of semiconductor crystals, when the plasma of thermal carriers is not in a state of thermodynamic equilibrium. It has been shown that the radiation power is a power function of the magnetic field induction. The theoretical calculations are in good agreement with the experimental results. | ||
| 7. |
Milenin G. V. Transformation of structural defects in semiconductors under action of electromagnetic and magnetic fields causing resonant phenomena [Електронний ресурс] / G. V. Milenin, R. A. Red'ko // Semiconductor physics, quantum electronics & optoelectronics. - 2019. - Vol. 22, № 1. - С. 39-46. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2019_22_1_9 Possible mechanisms of transformation of defects in semiconductor structures under action of electromagnetic radiation in the microwave range and pulsed magnetic field have been analyzed. Electrical-resonance effects under nonthermal action of electromagnetic fields have been considered, namely: resonant detachment of dislocations and destruction of impurity complexes in semiconductor crystals, electrical-resonance transformation of defects in semiconductor crystals under action of weak pulsed magnetic fields; magnetic-resonance effects on defects in semiconductor crystals under action of weak magnetic and electromagnetic fields. It has been shown that alternative interaction mechanisms should be used to explain a large number of reliably established magnetically induced effects and phenomena associated with the nonthermal effects of microwave fields. There are two the most probable mechanisms: (i) spin-dependent reactions of paramagnetic defects in semiconductor crystals, as a result of which detachment and subsequent movement of dislocations in the field of internal stresses and (ii) resonant phenomena of various nature occur, which, generally, do not require high energies, and have been realized when the oscillation frequencies of the system and the external action coincide. A sharp increase in the amplitude of oscillations leads to detachment of dislocations and destruction of impurity complexes with subsequent movement and diffusion under action of a mosaic of internal mechanical stresses in the crystal. The principal physical identity of the influence of a weak magnetic field and nonthermal action of microwave radiation on a semiconductor material has been shown. | ||
| 8. |
Milenin G. V. Transformation of defects in semiconductor structures under the influence of microwave electromagnetic radiation, which is stimulated by drift phenomena [Електронний ресурс] / G. V. Milenin, R. A. Redko // Semiconductor physics, quantum electronics & optoelectronics. - 2020. - Vol. 23, № 1. - С. 46-51. - Режим доступу: http://nbuv.gov.ua/UJRN/MSMW_2020_23_1_8 The mechanisms of directional motion of highly mobile charged point defects in semiconductor structures under the non-thermal action of microwave radiation have been considered. The effects of particle drift along the direction of the electric field of a homogeneous electromagnetic wave and in the direction of its propagation, as well as the appearance of a gradient ponderomotive force in an inhomogeneous wave have been analyzed. The features of the appearance of an electric force acting on charged point defects as a result of formation of electron-hole junctions around charged dislocations have been studied. Analytical relationships describing the dynamics of impurity ions in semiconductor structures exposed to microwave radiation have been presented.Розглянуто явище спрямованого руху рухомих заряджених точкових дефектів у напівпровідникових структурах за дії магнітних полів. Вивчено особливості дрейфу дефектів у знакозмінних магнітних полях. Проаналізовано ефект спрямованого переміщення заряджених дефектів при спільній дії постійного та змінного магнітних полів. Подано аналітичні співвідношення для швидкості дрейфу дефектів у напівпровідникових структурах при даних впливах. | ||
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